Semiconductor-glass composite material and method for producing

Details Semiconductor-glass composite material and method for producing Semiconductor-glass composite material and method for producing

1979-10-01

1982-01-19

Robinson, Ellis P.

Stock material or miscellaneous articles

Circular sheet or circular blank

Recording medium or carrier

313 94, 1563082, 65 41, 427 87, 427 74, 428426, 428428, 428697, 428699, 428701, 428702, 428432, B32B 302, B32B 1706, C03B 2700

Patent

active

043117430

ABSTRACT:
A semiconductor-glass composite material comprises at least one semiconductor bonded to a glass substrate, with the semiconductor layer having a strain .epsilon..ltoreq.0.3 per mil, and a dislocation density N.sub.V .ltoreq.2.times.10.sup.6 cm.sup.-2. In a process for producing the semiconductor-glass composite material, the semiconductor and glass are heated to a bonding temperature, bonded under pressure, and tempered at a temperature T.sub.a such that the viscosity of the glass at T.sub.a is 10.sup.12 to 10.sup.13.5 poise, and the following relationship holds: ##EQU1## wherein .alpha..sub.G and .alpha..sub.S are the coefficients of expansion of the glass and semiconductor, respectively, and T is temperature. The composite material is then cooled to room temperature.

REFERENCES:
patent: 3241010 (1966-03-01), Eddleston
patent: 3408222 (1968-10-01), Navias
patent: 3415680 (1968-12-01), Perri
patent: 3637425 (1972-01-01), McMillan
patent: 3689357 (1972-09-01), Jordan
patent: 3909332 (1975-09-01), Yerman
patent: 3914136 (1975-10-01), Kressel
patent: 4002799 (1977-01-01), Dumesnel
patent: 4133690 (1969-01-01), Muller

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