Semiconductor-gated ionographic method and apparatus

Details Semiconductor-gated ionographic method and apparatus Semiconductor-gated ionographic method and apparatus

1982-04-30

1985-03-05

Church, Craig E.

X-ray or gamma ray systems or devices

Specific application

Xeroradiography

378 33, B41M 500

Patent

active

045035512

ABSTRACT:
Radiographic imaging method and apparatus are disclosed which include a gas gap formed between closely spaced dielectric and photoconductor surfaces, across which gap a uniform strength electric field is applied. Counting gas is supplied to the gas gap, and penetrating radiation, such as X-ray radiation, is directed onto the photoconductor through an object to be examined. Photons absorbed in the photoconductor induce electron-hole pairs resulting in increased localized conductivity thereof and localized intensification of the electric field across the gas gap to a level for production of gas discharge across the gap. Ion amplification by Townsend cascade enhances charge transfer in the gas gap. An apertured platen may be provided against which dielectric imaging paper is held by gas pressure to facilitate formation of the narrow, substantially uniform width, gas gap. A charge image is produced on the dielectric imaging surface which then is developed using conventional xerographic developing techniques.

REFERENCES:
patent: 2825814 (1958-03-01), Walkup
patent: 3653890 (1972-04-01), Seimiya et al.
patent: 3774029 (1973-11-01), Muntz et al.
patent: 3932751 (1976-01-01), Verhille
patent: 4065670 (1977-12-01), Morsell
patent: 4260887 (1981-04-01), Dannert

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