Semiconductor gate turn-off device

Details Semiconductor gate turn-off device Semiconductor gate turn-off device

1975-04-07

1977-03-08

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307252C, 357 37, 357 89, H01L 29743

Patent

active

040115798

ABSTRACT:
The specification discloses a semiconductor switching device which includes heavily doped exterior layers of semiconductor material to provide rapid turn-on and turn-off actions in response to gate signals, while substantially reducing susceptibility to secondary breakdown and the occurrence of significant voltages across the device during a high conductivity mode. A preferred embodiment includes a six layer semiconductor device having a heavily doped P+ exterior layer in contact with an electrode to form an anode terminal, and a heavily doped N+ exterior layer in contact with an electrode to form a cathode terminal. A gate electrode is formed in contact with an intermediate N-type layer adjacent the anode to provide a gate terminal.

REFERENCES:
patent: 3165710 (1965-01-01), Strull
patent: 3251004 (1966-05-01), Shombert et al.
patent: 3256470 (1966-06-01), Gerlach
patent: 3337783 (1967-08-01), Stehney
patent: 3401320 (1968-09-01), Weinstein
patent: 3427512 (1969-02-01), Mapother
patent: 3465216 (1969-09-01), Teszner
patent: 3538401 (1970-11-01), Chu

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