Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device
Reexamination Certificate
2004-08-12
2008-11-11
Gurley, Lynne A. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
Having specific type of active device
C257S208000, C257SE27062
Reexamination Certificate
active
07449731
ABSTRACT:
A gate circuit has a complementary transistor structure comprising transistors of different conductivity types connected in series respectively between two power source terminals and an output terminal, sharing a gate connected to an input terminal, the transistors of different conductivity types each comprising plural transistors, and the plural transistors being connected in series between each of the two power source terminal and the output terminal. The gate is provided to extend like a line, plural diffusion layers are provided along the direction of the line in which the gate extends, and a conduction channel of each of the plural transistors connected in series between the power source terminals and the output terminal is formed in the diffusion layers.
REFERENCES:
patent: 5229667 (1993-07-01), Shimizu
patent: 5302871 (1994-04-01), Matsuzaki et al.
patent: 2-174258 (1990-07-01), None
patent: 02-174258 (1990-07-01), None
patent: 2-174259 (1990-07-01), None
patent: 5-55881 (1993-03-01), None
patent: 2621612 (1997-04-01), None
Kanari Katsunao
Takeda Hideo
Arena Andrew O.
Fujitsu Limited
Gurley Lynne A.
Staas & Halsey , LLP
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