Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device
Patent
1996-08-05
2000-12-12
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
Having specific type of active device
257207, 257208, 257211, H01L 2710
Patent
active
061602752
ABSTRACT:
In order to present a basic cell of a master slice type LSI having a high memory density and a high speed logic circuitry, a basic cell is composed of each pair of the PMOS 1, NMOS 4, PMOS 7, and NMOS 10, and three contact holes--besides the contact holes 17, as the contact holes within the MOS channel width W of each MOS, that are connected to the GND power lines 51 and 53, or the Vcc power lines 50 and 52--are formed in the direction perpendicular to each of the power lines. Additionally, in order to present a semiconductor integrated device having a static type RAM that has realized with its simple structure a shortening of the memory cycle, a RAM is constructed by having memory cells, in which each is composed of a pair of transfer MOSFETs, which both of the MOSFETs are turned on during the write-in operation and one of the MOSFETs is turned on during the read-out operation, is located in between a complementary data line and an input/output node that has a complementary relationship with an information storage part comprised by a pair of inverter circuits in which the inputs and outputs are mutually cross-connected. By constructing in this way, it becomes possible to speed up the write-in operation with accuracy by having a complementary write-in signal received from a pair of the complementary lines during the read-out operation, and it becomes possible to obtain read-out signals rapidly and to prevent write-in errors caused by the pre-read-out potential of the data line because the information storage part is connected only to one of the data lines through one of the transfer gates during the read-out operation.
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patent: 5343058 (1994-08-01), Shiffer II
patent: 5404034 (1995-04-01), Yin
Hirose Kousaku
Horino Nozomi
Kaminaga Yasuo
Kobayashi Isamu
Nishio Yoji
Hitachi , Ltd.
Ngo Ngan V.
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