Semiconductor gas sensor

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357 23, H01L 2966

Patent

active

042387582

ABSTRACT:
A metal-oxide-semiconductor transistor gas sensor including a gate oxide film of a dielectric material having a permittivity of more than about ten between a substrate and a gate is provided. The existence of a particular gas is detected by the change in threshold voltage of the transistor.

REFERENCES:
patent: 3832700 (1974-08-01), Wil
Jour. App. Physics-vol. 46, No. 9, Sep. 1975, Lundstrom et al., pp. 3876-3881.

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