1978-12-08
1980-12-09
Wojoiechowicz, Edward J.
357 23, H01L 2966
Patent
active
042387582
ABSTRACT:
A metal-oxide-semiconductor transistor gas sensor including a gate oxide film of a dielectric material having a permittivity of more than about ten between a substrate and a gate is provided. The existence of a particular gas is detected by the change in threshold voltage of the transistor.
REFERENCES:
patent: 3832700 (1974-08-01), Wil
Jour. App. Physics-vol. 46, No. 9, Sep. 1975, Lundstrom et al., pp. 3876-3881.
Kabushiki Kaisha Suwa Seikosha
Wojoiechowicz Edward J.
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