Semiconductor gas sensor

Details Semiconductor gas sensor Semiconductor gas sensor

1982-06-07

1984-06-05

Reynolds, B. A.

Electrical resistors

Resistance value responsive to a condition

Gas, vapor, or moisture absorbing or collecting

73 23, 73 27R, 422 90, 422 98, 436121, G01N 2712, G01N 2704, G01N 2716

Patent

active

044531516

ABSTRACT:
A semiconductor gas sensor for use in equipment for detecting small amounts of H.sub.2 S. The method of sensor fabrication comprises spray deposition of a mixture of metal oxides mixed together with various metal and non-metal materials which serve in the finished product as activators, dopants, and/or film binder materials, and including in suspension a molecular sieve material, for enhancing and defining porosity on a scale of molecular dimensions in the finished sensor. All of the foregoing materials are suspended in a suitable solution and preferably sprayed onto a heated insulating substrate to form the finished product. The example sensor, capable of selective detection of H.sub.2 S in air and a sensitivity of less than 1 PPM (part per million), is comprised of a platinum activated alumina, tin oxide, and zeolite molecular sieve material.

REFERENCES:
patent: 4013943 (1977-03-01), Chou et al.
patent: 4197089 (1980-04-01), Willis et al.
patent: 4338281 (1982-07-01), Treitinger et al.
patent: 4347732 (1982-09-01), Leary
patent: 4387165 (1983-07-01), Youngblood

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