Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1997-04-07
1998-09-29
Wallace, Valencia Martin
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257208, 257209, 257528, 438600, 438601, H01L 2710, H01L 2900
Patent
active
058148760
ABSTRACT:
A semiconductor fuse device is formed of a conductive semiconductor substrate (11) having a top surface and a bottom surface. A layer (12) of dielectric material is provided on a portion of the top surface and a first conductive layer (15) is formed wholly on a first portion of the layer (12) of dielectric material and forms a first contact of the device. A second conductive layer (14) is formed on a second portion of the layer (12) of dielectric material spaced from the first portion and extends to contact the top surface of the substrate (11). A fuse portion (16) is formed wholly on the layer (12) of dielectric material and extends between and in electrical contact with the first and second conductive layers (14, 15). The bottom surface of the substrate (11) provides a second contact of the device, so that only one wire bond is necessary.
REFERENCES:
patent: 5021861 (1991-06-01), Baliga
patent: 5025300 (1991-06-01), Billig et al.
patent: 5241212 (1993-08-01), Motonami et al.
patent: 5436496 (1995-07-01), Jerome et al.
Daspet Danielle Bielle
Peyre-Lavigne Andre
Reynes Jean Michel
Scheid Emmanuel
Martin Wallace Valencia
Motorola Inc.
Zhou Ziye
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