Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-05-31
2005-05-31
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S209000, C257S758000, C438S281000, C438S333000
Reexamination Certificate
active
06900516
ABSTRACT:
An increased number of fuses per area are provided in this semiconductor device while complying with the predetermined distance between the fuses. The device having a first patterned, conductive interconnect plane on a passivated substrate; a second patterned, conductive interconnect plane on the first patterned, conductive passivated interconnect plane; contact devices for selectively electrically contact-connecting the patterned, conductive interconnect planes to one another; a fuse device in a nonpassivated section of the second patterned, conductive interconnect plane with predetermined fuse regions for selectively linking interconnects; the fuse device being divided into fuse modules with fuse pairs and the fuse regions thereof at a predetermined distance from one another, which can be linked to a predetermined potential via a central interconnect.
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Bänisch Andreas
Obergrussberger Franz-Xaver
Infineon - Technologies AG
Nelms David
Tran Long
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