Semiconductor fuse device

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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Details

C257S209000, C257S758000, C438S281000, C438S333000

Reexamination Certificate

active

06900516

ABSTRACT:
An increased number of fuses per area are provided in this semiconductor device while complying with the predetermined distance between the fuses. The device having a first patterned, conductive interconnect plane on a passivated substrate; a second patterned, conductive interconnect plane on the first patterned, conductive passivated interconnect plane; contact devices for selectively electrically contact-connecting the patterned, conductive interconnect planes to one another; a fuse device in a nonpassivated section of the second patterned, conductive interconnect plane with predetermined fuse regions for selectively linking interconnects; the fuse device being divided into fuse modules with fuse pairs and the fuse regions thereof at a predetermined distance from one another, which can be linked to a predetermined potential via a central interconnect.

REFERENCES:
patent: 6407586 (2002-06-01), Fischer et al.
patent: 6525398 (2003-02-01), Kim et al.
patent: 6774456 (2004-08-01), Rusch et al.
patent: 2001/0019167 (2001-09-01), Fischer et al.
patent: 2002/0100957 (2002-08-01), Rusch et al.
patent: 199 26 499 (2001-03-01), None
patent: 100 06 243 (2001-08-01), None
patent: 0 987 759 (2000-03-01), None

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