Semiconductor for sensing infrared radiation and method thereof

Details Semiconductor for sensing infrared radiation and method thereof Semiconductor for sensing infrared radiation and method thereof

2008-11-13

2011-10-18

Porta, David (Department: 2884)

Radiant energy

Invisible radiant energy responsive electric signalling

Infrared responsive

C250S338400, C250S339010, C250S349000, C257S030000

Reexamination Certificate

active

08039797

ABSTRACT:
A semiconductor device for sensing infrared radiation is provided. In an embodiment, the semiconductor device includes a sensor configuration which includes a light receiving portion for converting incident photons into heat and a sensing portion integrated with the light receiving portion and having a resistance varying according to the converted heat; and a sensing circuit which includes a common mode current providing portion and a current subtraction portion, wherein the common mode current providing portion outputs a common mode current related to a value of a current which is flowing in the sensing portion when there is no incident light and the current subtraction portion outputs subtraction currents for the common mode current and a sensing current related to a current output from the sensing portion.In another embodiment, the sensing configuration includes a heat removing portion which is disposed to form an empty space between the heat removing portion and the light receiving portion and the sensing portion, and removes accumulated heat from the light receiving portion and the sensing portion, and the sensing circuit includes an actuating voltage supplying portion which applies electric potential between the sensing portion and the heat removing portion to make the light receiving portion and the sensing portion elastically deflect into the empty space and consequently contact the heat removing portion to remove the heat.

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Hwang et al. “Pixel Readout Circuit with Current Mirroring Injection for Microbolometer FPAs.” Electronics Letters (44) 12: p. 1-2.
Tanaka et al. (2003). “Performance of 320x240 Uncooled Bolometer-type Infrared Focal Plane Arrays.” Proc. SPIE vol. 5074: p. 414-424.

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