Semiconductor flow sensor

Details Semiconductor flow sensor Semiconductor flow sensor

1991-12-12

1994-05-17

Chin, Stephen

Measuring and testing

Volume or rate of flow

Thermal type

7317012, 7386195, G01F 168

Patent

active

053117751

ABSTRACT:
The flow rate sensor is made from a silicon substrate (1). A first face (A) of the substrate is provided with a heating element (2) disposed in a first region (R1) and with at least one thermometer component (4) disposed in a second region (R2), the first and second regions being insulated from each other by a third zone (R3) of oxidized porous silicon. According to the invention, the sensor is adapted to receive the flow of fluid (E) over the second face (B) of the substrate (1), with the first and second regions (R1, R2) forming respective thermal short circuits between the first and second faces (A, B) of said substrate.

REFERENCES:
patent: 4680963 (1987-07-01), Tabata et al.
patent: 4888988 (1989-12-01), Lee et al.
patent: 4890489 (1990-01-01), Huijsiang
patent: 4909078 (1990-03-01), Sittler et al.
patent: 5090254 (1992-02-01), Gucked et al.

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