Semiconductor floating gate storage device with lateral electrod

Details Semiconductor floating gate storage device with lateral electrod Semiconductor floating gate storage device with lateral electrod

1975-12-04

1977-04-19

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 24, 357 12, 357 54, 357 59, 307304, 340173R, H01L 2978, H01L 2988, H01L 2934, H01L 2904

Patent

active

040191974

ABSTRACT:
A semiconductor storage device having a field-effect transistor with a floating insulating gate electrode on which information-containing charge can be stored by tunneling charge carriers between the semiconductor body and the gate electrode. According to the invention the recording and erasing voltage is applied between two juxtaposed surface zones of the same conductivity type present outside the channel region and the source and drain zones, one of the surface zones, which is preferably also the source or drain zone, being separated from the floating gate electrode by an insulating layer having a thickness of less than 0.01 micron through which charge carriers can tunnel. Recording and erasing can be carried out at low voltages and with a voltage source of the same polarity relative to a reference potential.

REFERENCES:
patent: 3755721 (1973-08-01), Frohman-Bentchkowsky
patent: 3825945 (1974-07-01), Masuoka
patent: 3825946 (1974-07-01), Frohman-Bentchkowsky
patent: 3853496 (1974-12-01), Kim
patent: 3868187 (1975-02-01), Masuoka
patent: 3890632 (1975-06-01), Ham et al.
patent: 3909320 (1975-09-01), Gauge et al.
IBM Technical Disclosure Bulletin, by R. P. James, vol. 16, No. 2, July 1973, pp. 690 and 691.

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