Semiconductor floating gate sensor device

Details Semiconductor floating gate sensor device Semiconductor floating gate sensor device

1997-04-07

1999-07-27

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Responsive to non-optical, non-electrical signal

257316, 257415, 7351432, 73754, H01L 2984

Patent

active

059294728

ABSTRACT:
A sensor device (40) is formed in a semiconductor substrate (41). The sensor device (40) includes a microstructure (60) that is free to move in response to a force. The microstructure (60) is overlying a floating gate structure (51) and a channel region (44). A guard ring (52) is formed around the floating gate structure (51) to retard the migration of charge onto the floating gate structure (51). This in turn stabilizes the operational performance of the sensor device (40) over time.

REFERENCES:
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patent: 5417111 (1995-05-01), Sherman et al.
patent: 5504356 (1996-04-01), Takeuchi et al.
"The Resonant Gate Transistor", Harvey C. Nathanson, William E. Newell, Robert A. Wickstrom, and John Ransford Davis, Jr.; Transactions on Electronic Devices, Vol. Ed 14, No. 3, Mar. 1967; pp. 117-133.
"The capacitively Controlled Field Effect Transistor (CCFET) As a New Low Power Gas Sensor", Zendo Gergintschew, Peter Kornetzky, Dagmar Schipanski; Elsevier Science S.A., ; Sensors and Actuators B 35-36 (1996) 285-289.

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