Semiconductor flash memory

Static information storage and retrieval – Addressing – Plural blocks or banks

Reexamination Certificate

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Details

C365S230060, C365S230010, C365S226000, C365S185110

Reexamination Certificate

active

07414912

ABSTRACT:
A semiconductor flash memory includes an erase/write control unit that, when performing an erase/write operation of read memory cells, reads and senses memory current of the read memory cells for each memory cell, and adjusts threshold voltage of each of the read memory cells to a predetermined value, and a readout control unit that, when performing a read operation, selects at least two read memory cells simultaneously from among the read memory cells to which the erase/write control unit stored the same data, and senses total memory current for the at least two read memory cells.

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