Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-07-31
2007-07-31
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185330, C365S185240, C365S189011
Reexamination Certificate
active
10930873
ABSTRACT:
A semiconductor flash memory includes an erase/write control unit that, when performing an erase/write operation of read memory cells, reads and senses memory current of the read memory cells for each memory cell, and adjusts threshold voltage of each of the read memory cells to a predetermined value, and a readout control unit that, when performing a read operation, selects at least two read memory cells simultaneously from among the read memory cells to which the erase/write control unit stored the same data, and senses total memory current for the at least two read memory cells.
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Koda Kenji
Omoto Kayoko
Otani Naoki
Taito Yasuhiko
Leydig , Voit & Mayer, Ltd.
Nguyen Viet Q.
Renesas Technology Corp.
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