Semiconductor filter structure and method of manufacture

Wave transmission lines and networks – Coupling networks – Electromechanical filter

Reexamination Certificate

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C257S532000

Reexamination Certificate

active

07466212

ABSTRACT:
In one embodiment, a split well region of one conductivity type is formed in semiconductor substrate of an opposite conductivity type. The split well region forms one plate of a floating capacitor and an electrode of a transient voltage suppression device.

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