Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated...
Reexamination Certificate
2005-10-11
2005-10-11
Nguyen, Simon (Department: 2685)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
C455S307000, C455S339000, C257S533000
Reexamination Certificate
active
06953980
ABSTRACT:
A filter circuit (10) is formed on a semiconductor substrate (11) formed with a trench (40) that is lined with a dielectric layer (38). A conductive material (37) is disposed in the trench and coupled to a node (62) to provide a capacitance that modifies a frequency response of an input signal (VIN) to produce a filtered signal (VOUT). An electrostatic discharge device includes an inductor (74) coupled to back to back diodes (17, 18) formed in the substrate to avalanche when a voltage on the node reaches a predetermined magnitude.
REFERENCES:
patent: 6115592 (2000-09-01), Ueda et al.
patent: 6121669 (2000-09-01), Kalb et al.
patent: 6140674 (2000-10-01), Hause et al.
Escoffier Rene
Pearse Jeffrey
Robb Francine Y.
Stefanov Evgueniy
Zdebel Peter J.
Hightower Robert F.
Nguyen Simon
Semiconductor Components Industries LLC
Stipanuk James J.
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