Coating apparatus – Gas or vapor deposition
Reexamination Certificate
2004-03-18
2010-06-22
Zervigon, Rudy (Department: 1792)
Coating apparatus
Gas or vapor deposition
C118S641000, C118S069000, C156S345270, C156S345520
Reexamination Certificate
active
07740703
ABSTRACT:
A semiconductor film formation device has: a reaction vessel that includes a gas flow path to allow source gas to pass through and a substrate mount site provided in the gas flow path to mount a substrate; a temperature control means that is disposed opposite to the substrate mount site and close to the reaction vessel to control the internal temperature of the reaction vessel; and a thermal conductivity adjusting member that is disposed between the reaction vessel and the temperature control means. The thermal conductivity adjusting member has a section with a thermal conductivity different from the other section along the gas flow path.
REFERENCES:
patent: 4920918 (1990-05-01), Adams et al.
patent: 4926793 (1990-05-01), Arima et al.
patent: 5592581 (1997-01-01), Okase
patent: 5849076 (1998-12-01), Gaylord et al.
patent: 5863843 (1999-01-01), Green et al.
patent: 5961850 (1999-10-01), Satou et al.
patent: 6036878 (2000-03-01), Collins
patent: 6176929 (2001-01-01), Fukunaga et al.
patent: 6228174 (2001-05-01), Takahashi
patent: 6308654 (2001-10-01), Schneider et al.
patent: 6491518 (2002-12-01), Fujikawa et al.
patent: 6749687 (2004-06-01), Ferro et al.
patent: 6790311 (2004-09-01), Collins et al.
patent: 2004/0060512 (2004-04-01), Waldhauer et al.
patent: 61018124 (1986-01-01), None
patent: 61026218 (1986-02-01), None
patent: 61279120 (1986-12-01), None
patent: 63083275 (1988-04-01), None
patent: 01025985 (1989-01-01), None
patent: 4-132213 (1992-05-01), None
patent: 06010142 (1994-01-01), None
Machine Translation of JP 06010142 A.
Hasegawa Mitsuru
Miyauchi Akihiro
Takeshi Meguro
Watanabe Kazutoshi
Hitachi Cable Ltd.
McGinn IP Law Group PLLC
Zervigon Rudy
LandOfFree
Semiconductor film formation device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor film formation device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor film formation device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4167168