Semiconductor film and process for its production

Fishing – trapping – and vermin destroying

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437101, 437109, 437937, 136258, H01L 2120, H01L 21203, H01L 21205

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051943980

ABSTRACT:
A method for forming an amorphous semiconductor film, which comprises (a) a film-forming step of forming a semiconductor film having not more than 20 atomic percent of bound hydrogen to a thickness of 3 to 1000 .ANG., and (b) a modifying step of modifying the formed film, the steps being repeated multiple times.

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patent: 4968384 (1990-11-01), Asano
patent: 4986213 (1991-01-01), Yamazaki et al.
K. Takahashi et al, "Amorphous Silicon Solar Cells", J. Wiley (New York 1986), pp. 114 and 118.
A. Asano et al, J. Appl. Phys., vol. 65, No. 6, Mar. 1989, pp. 2439-2444.
M. Pinarbasi et al, Thin Solid Films, vol. 171, No. 1, Apr. 1989, pp. 217-233.

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