Semiconductor field oxidation process

Details Semiconductor field oxidation process Semiconductor field oxidation process

1990-11-19

1992-02-25

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 57, 437 34, H01L 2176, H01L 21266

Patent

active

050913328

ABSTRACT:
Front end processing for a CMOS substrate resulting in the formation of n-wells, p-wells, channel stops and field oxide regions. Both the n-type and p-type dopant are implanted through silicon nitride members with one type dopant being first blocked by a first layer of photoresist and the second dopant by a second layer of photoresist. The field oxide regions are grown after the first dopant is implanted. Relatively low level ion implantation is used and additional threshold adjusting implants are not needed.

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