Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1996-09-12
1998-07-07
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330 85, 330293, 330308, H03F 134
Patent
active
057775176
ABSTRACT:
The semiconductor amplifier circuit provided with frequency characteristics excellent in both band width and flatness is disclosed. The amplifier circuit comprises: an input section (10) including: a first inversion amplifier circuit (11) for inversion-amplifying an input signal; and a feedback circuit (15) of a field effect transistor having a grounded gate, a source for receiving a feedback signal, and a drain connected to an output terminal of the first inversion amplifier circuit; a first level shift circuit (20) for shifting level of an output of the input section; a second inversion amplifier circuit (30) for inversion-amplifying an output of the first level shift circuit; and a second level shift circuit (40) for shifting level of an output of the second inversion amplifier circuit. Here, the amplifier circuit is characterized in that the output of the second level shift circuit (40) is applied to the feedback circuit (15) as the feedback signal.
REFERENCES:
Y. Imai et al., "Design and Performance of Wideband GaAs MMIC's for High-Speed Optical Communication Systems", IEEE Transactions on Microwave Theory and Techniques, vol. 40, No. 2, Feb. (1992), pp. 185-190.
Kabushiki Kaisha Toshiba
Mullins James B.
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