Semiconductor device manufacturing: process – Chemical etching – Having liquid and vapor etching steps
Reexamination Certificate
2005-12-27
2005-12-27
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Having liquid and vapor etching steps
C438S745000, C438S750000, C134S001300
Reexamination Certificate
active
06979653
ABSTRACT:
Methods and apparatus for fabricating and cleaning in-process semi-conductor wafers are provided. An in-process wafer is placed within a closed chamber. A reactant gas is incorporated in a liquid solvent to form a “reactant mixture” that is capable of reacting with photoresist material (or other material) on a wafer surface to facilitate removal of the material from the wafer surface. The reactant mixture is condensed on one or more of the in-process wafer surfaces to form a thin film on the surface(s) of the wafer. The solvent in the reactant mixture acts as a transport medium to place the reactant gas on the wafer surface. The reactant gas is then able to react with the photoresist material (or other material) on the in-process wafer surface to effect removal the material. Following reaction of the reactant gas with the photoresist, the thin film of reactant mixture is removed from the wafer surface by flash heating, rinsing, draining, or other suitable means.
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Gilton Terry L.
Li Li
Fourson George
Klarquist & Sparkman, LLP
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