Semiconductor fabrication method and system

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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C257S431000, C257S432000, C257S434000, C257S774000, C257SE31127

Reexamination Certificate

active

07968962

ABSTRACT:
A semiconductor device is disclosed. In one embodiment, a device includes a substrate having one or more vias and a carrier coupled to the substrate to form a sealed cavity between the carrier and the substrate. In some embodiments, the sealed cavity may be pressurized. The device may also include a redistribution layer formed over the one or more vias on a side of the substrate. Other devices, systems, and methods are also disclosed.

REFERENCES:
patent: 6703689 (2004-03-01), Wada
patent: 7180149 (2007-02-01), Yamamoto et al.
patent: 7288757 (2007-10-01), Farnworth et al.
patent: 7419852 (2008-09-01), Benson et al.
patent: 7452743 (2008-11-01), Oliver et al.
patent: 7531443 (2009-05-01), Pratt
patent: 2008/0251871 (2008-10-01), Borthakur
patent: 2008/0308934 (2008-12-01), Alvarado et al.
patent: 2009/0014869 (2009-01-01), Vrtis et al.

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