Semiconductor fabricating process

Details Semiconductor fabricating process Semiconductor fabricating process

1994-05-24

1995-03-21

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437174, 437934, 437950, H01L 21268

Patent

active

053995066

ABSTRACT:
In order to reduce a junction leakage current and obtain a shallow junction, ion implantation to form a doped region, such as an active region of a transistor, is followed by a low-temperature annealing and pulsed laser irradiation. The annealing temperature and time of the low-temperature anneal are 600.degree. C. and one hour, for example. The subsequent pulsed laser irradiation is performed by a XeCl laser, for example, with irradiation energy of 700 mJ/cm2, and a pulse width of 44 nsec. This process can reduce the leakage current by effectively removing points defects around the junction, and enables activation without increasing the depth of the junction.

REFERENCES:
patent: 4151008 (1979-04-01), Kirkpatrick
patent: 4331485 (1982-05-01), Gat
patent: 4379727 (1983-04-01), Hansen et al.
patent: 4646426 (1987-03-01), Sasaki
Kwor et al., "Effect of Furnace Preanneal and Rapid Thermal Annealing on Arsenic Implanted Silicon", J. Electr. Soc.; Solid-State Science and Technology, May 1985, pp. 1201-1206.

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