Semiconductor fabricating apparatus with function of...

Optics: measuring and testing – By light interference – For dimensional measurement

Reexamination Certificate

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C438S016000

Reexamination Certificate

active

06972848

ABSTRACT:
When a semiconductor wafer placed in a chamber and having films thereon is etched using plasma generated in the chamber, a change in the amount of lights with at least two wavelengths, obtained from the wafer surface during the processing, is detected. The time between the time at which the amount of a light with one of two wavelengths is maximized and the time at which the amount of a light with the other wavelength is minimized is compared with a predetermined value to determine the state of etching processing.

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