Metal working – Barrier layer or semiconductor device making
Patent
1998-01-21
1999-03-09
Bueker, Richard
Metal working
Barrier layer or semiconductor device making
427 8, 4272481, C23C 1600
Patent
active
058794158
ABSTRACT:
A semiconductor fabricating apparatus comprises a reaction tube defining a space for heat treating a silicon wafer, heater means disposed to extend around the reaction tube, a load-lock chamber connected to the reaction tube by means of a gate valve, a supply pipe communicating with the load-lock chamber for supplying an inert gas and a gas including oxygen thereto, an oxygen densitometer, an inert gas flow rate adjuster and an oxygen flow rate regulator, and based on the results detected by the oxygen densitometer, controls the flow rate of the inert gas and the gas including oxygen, by means of the flow rate adjuster, the flow rate regulator, to maintain the oxygen concentration within the load-lock chamber at a desire value.
REFERENCES:
patent: 4369031 (1983-01-01), Goldman
patent: 5273423 (1993-12-01), Shiraiwa
patent: 5277579 (1994-01-01), Takanabe
patent: 5378283 (1995-01-01), Ushikawa
patent: 5388944 (1995-02-01), Takanabe
patent: 5407350 (1995-04-01), Iwabuchi
patent: 5433785 (1995-07-01), Saito
patent: 5462397 (1995-10-01), Iwabuchi
patent: 5527390 (1996-06-01), Ono
patent: 5551984 (1996-09-01), Tanahashi
patent: 5562383 (1996-10-01), Iwai
Bueker Richard
Kokusai Electric Co. Ltd.
LandOfFree
Semiconductor fabricating apparatus, method for controlling oxyg does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor fabricating apparatus, method for controlling oxyg, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor fabricating apparatus, method for controlling oxyg will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1316286