Coating apparatus – Gas or vapor deposition – With treating means
Patent
1996-05-16
1998-04-07
Breneman, R. Bruce
Coating apparatus
Gas or vapor deposition
With treating means
118719, 118715, 432241, 414937, 414939, C23C 1600
Patent
active
057359610
ABSTRACT:
A semiconductor fabricating apparatus comprises a reaction tube defining a space for heat treating a silicon wafer, heater means disposed to extend around the reaction tube, a load-lock chamber connected to the reaction tube by means of a gate valve, a supply pipe communicating with the load-lock chamber for supplying an inert gas and a gas including oxygen thereto, an oxygen concentration meter, an inert gas flow rate adjuster and an oxygen flow rate regulator. Based on the results detected by the oxygen concentration meter the flow rate of the inert gas and the gas including oxygen are controlled by means of the flow rate adjuster and the flow rate regulator to maintain the oxygen concentration within the load-lock chamber at a desired value.
REFERENCES:
patent: 4369031 (1983-01-01), Goldman
patent: 5273423 (1993-12-01), Shiraiwa
patent: 5277579 (1994-01-01), Takanabe
patent: 5378283 (1995-01-01), Ushikawa
patent: 5388944 (1995-02-01), Takanabe
patent: 5407350 (1995-04-01), Iwabuchi
patent: 5433785 (1995-07-01), Saito
patent: 5462397 (1995-10-01), Iwabuchi
patent: 5527390 (1996-06-01), Ono
patent: 5551984 (1996-09-01), Tanahashi
patent: 5562383 (1996-10-01), Iwai
Breneman R. Bruce
Kokusai Electric Co. Ltd.
LandOfFree
Semiconductor fabricating apparatus, method for controlling oxyg does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor fabricating apparatus, method for controlling oxyg, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor fabricating apparatus, method for controlling oxyg will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-9192