Semiconductor exposing system having apparatus for correcting ch

Photocopying – Projection printing and copying cameras – Step and repeat

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355 55, 355 77, G03B 2742, G03B 2752

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049222902

ABSTRACT:
The invention relates to a semiconductor exposing system for projecting a pattern of a mask onto a semiconductor wafer and, more particularly, to such a system having an apparatus for correcting an influence on the resolution by a fluctuation in wavelength of a laser light source. The system of the invention comprises: a laser light source; an optical projecting system for projecting a laser beam emitted from the laser light source onto the semiconductor wafer through the mask; and an apparatus for receiving a part of the laser beam emitted from the laser light source, for detecting the wavelength fluctuation, and for correcting the position and magnification of the optical projecting system in accordance with the wavelength fluctuation value or an apparatus for correcting the refractive index of the optical projecting system.

REFERENCES:
patent: 4703166 (1987-10-01), Bruning
"Photo-etching of PMMA by Excimer Loser Irradiation" by Kawamura et al., vol. 8, No. 6, Study on Laser, pp. 69-71.
"Excimer Laser-based Lithography" by Victor Pol et al., Proceedings of SPIE.
"High Precision Wavelength Meter with Fabry-Perot Optics" by Konishi et al., vol. 25, Applied Physics, pp. 311-316, (1981).

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