Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1998-09-01
2000-09-12
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
710723, 710724, 710729, 710744, H01L 213065
Patent
active
061177881
ABSTRACT:
Etching methods are described. In one embodiment, a first layer of first material is formed over a semiconductor substrate, and a second layer of second material is formed over the first layer. The second layer is selectively etched relative to the first layer, with the etching thereof taking place within a dual source, high density plasma etcher having a source powered at less than or equal to about 300 Watts, a bias power of less than or equal to about 300 Watts, and a pressure greater than or equal to about 10 mTorr. In another embodiment, a first undoped oxide layer is formed over a substrate, and a second doped oxide layer is formed over the first layer. The second doped oxide layer is etched selectively relative to the first undoped layer, with etching taking place within a dual source, high density plasma etcher wherein one of the sources is an inductive source powered at less than or equal to about 300 Watts. In yet another embodiment, a planar coil, high density plasma etcher is provided and etching takes place therein under conditions which are effective to etch the second layer of material at a rate of at least about 4,000 Angstrom/minute.
REFERENCES:
patent: 4753709 (1988-06-01), Welch et al.
patent: 4990229 (1991-02-01), Campbell et al.
patent: 5021121 (1991-06-01), Groechel et al.
patent: 5022958 (1991-06-01), Favreau et al.
patent: 5091049 (1992-02-01), Campbell et al.
patent: 5286344 (1994-02-01), Blalock et al.
patent: 5366590 (1994-11-01), Kadomura
patent: 5397962 (1995-03-01), Moslehi
patent: 5423945 (1995-06-01), Marks et al.
patent: 5626716 (1997-05-01), Bosch et al.
patent: 5639519 (1997-06-01), Patrick et al.
patent: 5681418 (1997-10-01), Ishimaru
patent: 5814563 (1998-09-01), Ding et al.
patent: 5837615 (1998-11-01), Rostoker
Micro)n Technology, Inc.
Umez-Eronini Lynette T.
Utech Benjamin L.
LandOfFree
Semiconductor etching methods does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor etching methods, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor etching methods will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-95793