Semiconductor etching apparatus with magnetic array and vertical

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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Details

156643, 156646, 204298, B44C 122, C03C 1500, H01L 21306, C23F 102

Patent

active

046327193

ABSTRACT:
In an apparatus for etching a large semiconductor wafer the etch rate and uniformity of etching at the edges is improved by using an array of magnets behind the collector plate to form a double ring of plasma and using a grounded shield ring with perforations to pass gases. The shield ring extends both above and below the surface of the wafer being etched.

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"High Rate Reactive Ion Etching Using a Magnetron Discharge", Haruo Okano et al, Solid State Technology, Apr. 1982, pp. 166 et seq.

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