Semiconductor etching

Details Semiconductor etching Semiconductor etching

1978-03-30

1979-03-06

Tufariello, T. M.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

2041294, 20412995, C25F 312, C25F 314

Patent

active

041429532

ABSTRACT:
KOH can be used as the electrolyte for self-limiting etching of GaAs to preferentially remove p-type material from n-type material but does not work with GaAlAs because etching is halted by the precipitation of aluminium hydroxide. An aqueous solution of triethanolamine has been found to be an alternative electrolyte which does not suffer from this problem. Preferably no external drive voltage is used but instead the current flow is promoted by the e.m.f. developed by the etching cell itself.

REFERENCES:
patent: 3184399 (1965-05-01), Schnable et al.
patent: 3251757 (1966-05-01), Schmitz
patent: 3413205 (1968-11-01), Hardman
patent: 3421987 (1969-01-01), La Boda
patent: 3791948 (1974-02-01), Dixon et al.
patent: 3959098 (1976-05-01), Schwartz

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