Semiconductor equipment

Details Semiconductor equipment Semiconductor equipment

2005-06-07

2005-06-07

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S758000, C257S342000

Reexamination Certificate

active

06903460

ABSTRACT:
Semiconductor equipment includes a semiconductor substrate, a plurality of transistors having a source cell and a drain cell disposed alternately on the substrate, and upper and lower layer wirings for electrically connecting the source cells and the drain cells. The lower layer wiring includes a first source wiring for connecting the neighboring source cells and a first drain wiring for connecting the neighboring drain cells. The upper layer wiring includes a second source wiring for connecting to the first source wiring and a second drain wiring for connecting to the first drain wiring. A width of the second source wiring is wider than that of the first source wiring, and a width of the second drain wiring is wider than that of the first drain wiring. The second source wiring and the second drain wiring are disposed alternately.

REFERENCES:
patent: 4636825 (1987-01-01), Baynes
patent: 4948754 (1990-08-01), Kondo et al.
patent: 5192989 (1993-03-01), Matsushita et al.
patent: 5412239 (1995-05-01), Williams
patent: 5468668 (1995-11-01), Neilson et al.
patent: 5672894 (1997-09-01), Maeda et al.
patent: A-H03-239369 (1991-10-01), None
patent: A-H07-263665 (1995-10-01), None
Hazel Schofield et al., “Assembly of FlipFET™ Devices”,International Rectifier, AN-1011, May 22, 2000, pp. 1-6.
“International Rectifier”, IRF6150, PD-93943, pp. 1-3.
Hazel Schofield et al., “FlipFET™ MOSFET Design for High Volume SMT Assembly”,International Rectifier, pp. 1-6.

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