Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2005-09-06
2005-09-06
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257S302000, C257S135000, C257S220000, C438S242000, C438S137000
Reexamination Certificate
active
06940144
ABSTRACT:
Semiconductor equipment includes a semiconductor substrate with a semiconductor layer embedded therein and a vertical type transistor. The substrate has a principal side, a rear side opposite to the principal side, and a trench disposed in the rear side of the substrate. The vertical type transistor has a first electrode disposed in the principal side of the substrate, a second electrode disposed in the rear side, and a diffusion region disposed in the principal side. The first electrode connects to the diffusion region through an interlayer insulation film. The second electrode is disposed in the trench and connects to the semiconductor layer exposed in the trench. This vertical transistor has a low ON-state resistance.
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patent: 6084284 (2000-07-01), Adamic, Jr.
patent: 6124179 (2000-09-01), Adamic, Jr.
patent: 6365932 (2002-04-01), Kouno et al.
patent: A-5-198758 (1993-08-01), None
Denso Corporation
Nelms David
Posz Law Group , PLC
Tran Long
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