Semiconductor energy detector

Details Semiconductor energy detector Semiconductor energy detector

2006-12-12

2006-12-12

Baumeister, B. William (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S447000, C257S448000, C257S459000, C257S465000, C257SE33076

Reexamination Certificate

active

07148551

ABSTRACT:
A semiconductor energy detector includes a semiconductor substrate comprised of a semiconductor of a first conductivity type, into which an energy ray of a predetermined wavelength range is incident from an incident surface thereof. A semiconductor energy detector includes a plurality of diffusion regions of a second conductivity type comprised of a semiconductor of a second conductivity type and a diffusion region of the first conductivity type comprised of a semiconductor of the first conductivity type higher in impurity concentration than the semiconductor substrate. The diffusion regions of a second conductivity type and the diffusion region of the first conductivity type are provided on a surface opposite to the incident surface of said semiconductor substrate. Each first conductivity type semiconductor substrate side of pn junctions, formed at the area of interface between the semiconductor substrate and each of the diffusion regions of the second conductivity type, is commonly connected.

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