Semiconductor encapsulation material and method for...

Details Semiconductor encapsulation material and method for... Semiconductor encapsulation material and method for...

2011-06-28

2011-06-28

Geyer, Scott B (Department: 2812)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Encapsulating

C501S055000, C501S065000

Reexamination Certificate

active

07968380

ABSTRACT:
A semiconductor encapsulation material of the present invention contains a glass for metal coating which has a strain point of 480° C. or higher, a temperature corresponding to a viscosity of 104dPa·s of 1,100° C. or lower, and a thermal expansion coefficient at 30 to 380° C. of 70×10−7to 110×10−7/° C. The semiconductor encapsulation material of the present invention contains no environmentally harmful substances, has a heat resistance temperature as high as 500° C. or above, and can be used for the encapsulation of metals susceptible to oxidation, e.g., Dumet.

REFERENCES:
patent: 2003/0124774 (2003-07-01), Kosokabe
patent: 2006/0172875 (2006-08-01), Cortright et al.
patent: 2008/0128923 (2008-06-01), Saito et al.
patent: 2002-37641 (2002-02-01), None
patent: 2003-17632 (2003-01-01), None
patent: 2006-035882 (2006-04-01), None

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