Semiconductor emitting device

Details Semiconductor emitting device Semiconductor emitting device

1991-12-23

1994-01-11

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

257 13, H01S 319

Patent

active

052788563

ABSTRACT:
A semiconductor emitting device is provided which is capable of emitting a blue light and, which comprises a double hetero junction structure having first clad layer, an active layer and a second clad layer, successively formed on a semiconductor substrate. First and second electrodes are respectively formed on the first and second clad layers. ZnSSe thin films of low-resistivity are preferably used as the first and/or clad second layers, while a ZnSTe film can be used as the active layer.

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patent: 4955031 (1990-09-01), Jain
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Journal of Applied Physics, vol. 57, No. 8, Part 1, Apr. 1985, pp. 2960-2962.
Applied Physics Letters, vol. 52, No. 1, Jan. 4, 1988, pp. 57-59.
Applied Physics Letters, vol. 40, No. 3, Feb. 3, 1982, pp. 246-248.
Japanese Journal of Applied Physics, vol. 25, No. 4, Part 2, Apr. 1986, pp. 279-281.

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