Semiconductor emitting device

Details Semiconductor emitting device Semiconductor emitting device

1990-01-24

1992-01-14

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

357 16, 357 17, H01S 319

Patent

active

050816322

ABSTRACT:
A semiconductor emitting device is provided which is capable of emitting a blue light. The device includes a first clad layer, an active layer and a second clad layer, successively formed on a semiconductor substrate. A nitrogen-doped p-type ZnSSe thin film of low-resistivity having a carrier concentration of not less than 1.times.10.sup.16 cm.sup.-3 and a resistivity of not more than 10 .OMEGA.-cm is used as the first clad layer or the second clad layer.

REFERENCES:
patent: 4868615 (1989-09-01), Kamata
patent: 4916496 (1990-04-01), Tomomura et al.
patent: 4955031 (1990-09-01), Jain

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