Semiconductor element with N channel and P region connected only

Details Semiconductor element with N channel and P region connected only Semiconductor element with N channel and P region connected only

1998-05-08

2000-12-26

Parker, Kenneth

Liquid crystal cells, elements and systems

Particular excitation of liquid crystal

Electrical excitation of liquid crystal

257487, 257 59, 257 72, G02F 1136, H01L 2904

Patent

active

061667862

ABSTRACT:
To prevent an n-channel thin-film transistor from being deteriorated by hot holes generated in a gate-negative pulse mode, a thin polysilicon film 10 is provided with a p-type semiconductor region 13 in contact with a channel region 14. The p-type semiconductor region 13 is electrically connected to nowhere except the channel region 14. Holes induced on the surface due to a gate-negative pulse are further supplied from the p-type semiconductor region 13. An electric field established by the gate-negative pulse is relaxed by the holes, fewer hot holes are injected into the gate oxide film, and the TFT characteristics are less deteriorated.

REFERENCES:
patent: H1435 (1995-05-01), Cherne et al.
patent: 4809056 (1989-02-01), Shirato et al.
patent: 5089870 (1992-02-01), Haond
patent: 5712501 (1998-01-01), Davies et al.
patent: 5812231 (1998-09-01), Kochi et al.
patent: 5898204 (1999-04-01), Watanabe
patent: 5920093 (1999-07-01), Huang et al.

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