Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – Groove
Reexamination Certificate
2007-05-29
2007-05-29
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
Groove
C257S623000
Reexamination Certificate
active
10922240
ABSTRACT:
The invention relates to a semiconductor element with metallic and non-metallic surfaces, with the non-metallic surfaces of the semiconductor being provided with a layer which has irregularities, so that adhesion between the non-metallic surface and the molding compound is thus increased.
REFERENCES:
patent: 4712129 (1987-12-01), Orcutt
patent: 4884124 (1989-11-01), Mori et al.
patent: 4909960 (1990-03-01), Watanabe et al.
patent: 5242862 (1993-09-01), Okabe et al.
patent: 5981085 (1999-11-01), Ninomiya et al.
patent: 6071201 (2000-06-01), Maruko
patent: 6323438 (2001-11-01), Ito
patent: 2001/0040291 (2001-11-01), Hashimoto
patent: 2004/0009683 (2004-01-01), Hiraoka et al.
patent: 2005/0146838 (2005-07-01), Shioga et al.
patent: 195 09 262 (1996-09-01), None
patent: 196 34 845 (1998-02-01), None
patent: 4-155852 (1992-05-01), None
patent: 05063112 (1993-03-01), None
Seeger, K. and R.E. Palmer. “Fabrication of Silicon Cones and Pillars Using Rough Metal Films as Plasma Etching Masks.”Applied Physics Letters. vol. 74, No. 11. (1999): pp. 1627-1629.
Infineon - Technologies AG
Maginot Moore & Beck
Ngo Ngan V.
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