Semiconductor element with electromagnetic shielding layer...

Active solid-state devices (e.g. – transistors – solid-state diode – With shielding

Reexamination Certificate

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Details

C257S660000, C257S728000, C257S729000, C257S730000, C257S780000

Reexamination Certificate

active

06838748

ABSTRACT:
A semiconductor chip of the present invention is so arranged that a front face on which an element circuit is formed has electrode pads and a side face and a back face are coated with a shielding layer for shielding electromagnetic waves. With this, it is possible to provide a semiconductor element capable of being easily manufactured into a smaller semiconductor device compared with a conventional semiconductor device equipped with a shielding cap; a semiconductor device; and a method for manufacturing a semiconductor element.

REFERENCES:
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patent: 5864088 (1999-01-01), Sato et al.
patent: 6114751 (2000-09-01), Kumakura et al.
patent: 6444372 (2002-09-01), McCullough
patent: 6472724 (2002-10-01), Matsuzawa et al.
patent: 20020166686 (2002-11-01), Toyoda et al.
patent: 08288686 (1996-11-01), None
patent: 10-256412 (1998-09-01), None
patent: 2000312127 (2000-11-01), None

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