Semiconductor element structure, electron emitter and method...

Details Semiconductor element structure, electron emitter and method... Semiconductor element structure, electron emitter and method...

2005-08-09

2005-08-09

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S099000, C257S103000, C438S022000, C438S025000

Reexamination Certificate

active

06927423

ABSTRACT:
A mask layer with an opening is formed on a main surface of a silicon substrate, which is exposed in the opening. Then, a hexagonal pyramidal island-shaped portion is formed from a first semiconductor nitride in the opening to complete a semiconductor element structure.

REFERENCES:
patent: 2002/0096994 (2002-07-01), Iwafuchi et al.
patent: 2003/0107047 (2003-06-01), Okuyama et al.
patent: 2004/0048409 (2004-03-01), Biwa et al.
patent: 2004/0227152 (2004-11-01), Biwa et al.
patent: 2001-338568 (2001-12-01), None

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