Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-01-23
2007-01-23
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257SE27133
Reexamination Certificate
active
10941823
ABSTRACT:
A semiconductor element which is capable of operating at a high speed, high in an electric current drive capability, and small in fluctuation among a plurality of elements, and a semiconductor device including the semiconductor element are provided. The semiconductor element has a first crystalline semiconductor region including plural crystal orientations without practically having a grain boundary on an insulating surface, the first crystalline semiconductor region being provided to be jointly connected to a conductive region including the first crystalline semiconductor region and a second crystalline semiconductor region, in which the conductive region is provided astride insulating films extending in a linear stripe pattern.
REFERENCES:
patent: 4330363 (1982-05-01), Biegesen et al.
patent: 4448632 (1984-05-01), Akasaka
patent: 4710604 (1987-12-01), Shirasu et al.
patent: 5097297 (1992-03-01), Nakazawa
patent: 5145808 (1992-09-01), Sameshima et al.
patent: 5163220 (1992-11-01), Zeto et al.
patent: 5578897 (1996-11-01), Nomura et al.
patent: 5589406 (1996-12-01), Kato et al.
patent: 5594296 (1997-01-01), Mitsutake et al.
patent: 5636042 (1997-06-01), Nakamura et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5659329 (1997-08-01), Yamanobe et al.
patent: 5759879 (1998-06-01), Iwasaki
patent: 5776803 (1998-07-01), Young
patent: 5841097 (1998-11-01), Esaka et al.
patent: 5847780 (1998-12-01), Kim et al.
patent: 5851862 (1998-12-01), Ohtani et al.
patent: 5854803 (1998-12-01), Yamazaki et al.
patent: 5858823 (1999-01-01), Yamazaki et al.
patent: 5932893 (1999-08-01), Miyanaga et al.
patent: 5953597 (1999-09-01), Kusumoto et al.
patent: 5965915 (1999-10-01), Yamazaki et al.
patent: 5970368 (1999-10-01), Sasaki et al.
patent: 5981974 (1999-11-01), Makita
patent: 5986306 (1999-11-01), Nakajima et al.
patent: 5994174 (1999-11-01), Carey et al.
patent: 6127702 (2000-10-01), Yamazaki et al.
patent: 6133583 (2000-10-01), Ohtani et al.
patent: 6162667 (2000-12-01), Funai et al.
patent: 6184559 (2001-02-01), Hayakawa et al.
patent: 6210996 (2001-04-01), Yamazaki et al.
patent: 6283813 (2001-09-01), Kaneko et al.
patent: 6288414 (2001-09-01), Ahn
patent: 6291320 (2001-09-01), Yamazaki et al.
patent: 6307214 (2001-10-01), Ohtani et al.
patent: 6335940 (2002-01-01), Ma
patent: 6337259 (2002-01-01), Ueda et al.
patent: 6355940 (2002-03-01), Koga et al.
patent: 6365933 (2002-04-01), Yamazaki et al.
patent: 6372562 (2002-04-01), Matsumoto
patent: 6387779 (2002-05-01), Yi et al.
patent: 6388386 (2002-05-01), Kunii et al.
patent: 6410368 (2002-06-01), Kawasaki et al.
patent: 6424331 (2002-07-01), Ozawa
patent: 6429100 (2002-08-01), Yoneda
patent: 6455360 (2002-09-01), Miyasaka
patent: 6472684 (2002-10-01), Yamazaki et al.
patent: 6475840 (2002-11-01), Miyanaga et al.
patent: 6482721 (2002-11-01), Lee
patent: 6528397 (2003-03-01), Taketomi et al.
patent: 6555875 (2003-04-01), Kawasaki et al.
patent: 6566179 (2003-05-01), Murley et al.
patent: 6583440 (2003-06-01), Yasukawa
patent: 6602744 (2003-08-01), Ino et al.
patent: 6602758 (2003-08-01), Kizilyalli et al.
patent: 6632696 (2003-10-01), Kimura et al.
patent: 6653212 (2003-11-01), Yamanaka et al.
patent: 6667188 (2003-12-01), Tanabe
patent: 6674136 (2004-01-01), Ohtani
patent: 6700133 (2004-03-01), Ohtani et al.
patent: 6727122 (2004-04-01), Seo et al.
patent: 6759628 (2004-07-01), Ino et al.
patent: 6780687 (2004-08-01), Nakajima et al.
patent: 6812491 (2004-11-01), Kato et al.
patent: 6841434 (2005-01-01), Miyairi et al.
patent: 6841797 (2005-01-01), Isobe et al.
patent: 6847050 (2005-01-01), Yamazaki et al.
patent: 6861614 (2005-03-01), Tanabe et al.
patent: 6862008 (2005-03-01), Yamazaki et al.
patent: 6875998 (2005-04-01), Kato et al.
patent: 6884668 (2005-04-01), Yamazaki et al.
patent: 6906343 (2005-06-01), Yamazaki
patent: 6930326 (2005-08-01), Kato et al.
patent: 6933527 (2005-08-01), Isobe et al.
patent: 2001/0000243 (2001-04-01), Sugano et al.
patent: 2001/0000627 (2001-05-01), Hayakawa et al.
patent: 2001/0015441 (2001-08-01), Kawasaki et al.
patent: 2001/0035526 (2001-11-01), Yamazaki et al.
patent: 2002/0004292 (2002-01-01), Yamazaki et al.
patent: 2002/0008801 (2002-01-01), Fukada et al.
patent: 2002/0047971 (2002-04-01), Kwon et al.
patent: 2002/0048864 (2002-04-01), Yamazaki et al.
patent: 2002/0056699 (2002-05-01), Sun et al.
patent: 2002/0075208 (2002-06-01), Bae et al.
patent: 2002/0096680 (2002-07-01), Sugano et al.
patent: 2002/0098628 (2002-07-01), Hamada et al.
patent: 2002/0119609 (2002-08-01), Hatano et al.
patent: 2002/0121665 (2002-09-01), Kawasaki et al.
patent: 2002/0134981 (2002-09-01), Nakamura et al.
patent: 2002/0139981 (2002-10-01), Young
patent: 2003/0001800 (2003-01-01), Nakajima et al.
patent: 2003/0047732 (2003-03-01), Yamazaki et al.
patent: 2003/0080436 (2003-05-01), Ishikawa
patent: 2003/0128200 (2003-07-01), Yumoto
patent: 2003/0141505 (2003-07-01), Isobe et al.
patent: 2003/0141521 (2003-07-01), Isobe et al.
patent: 2003/0181043 (2003-09-01), Tanada et al.
patent: 2003/0183854 (2003-10-01), Kato et al.
patent: 2003/0183875 (2003-10-01), Isobe et al.
patent: 2003/0186490 (2003-10-01), Kato et al.
patent: 2003/0209710 (2003-11-01), Yamazaki et al.
patent: 2003/0218169 (2003-11-01), Isobe et al.
patent: 2003/0218170 (2003-11-01), Yamazaki et al.
patent: 2003/0218171 (2003-11-01), Isobe et al.
patent: 2003/0218177 (2003-11-01), Yamazaki
patent: 2003/0219935 (2003-11-01), Miyairi et al.
patent: 2003/0230749 (2003-12-01), Isobe et al.
patent: 2003/0230750 (2003-12-01), Koyama et al.
patent: 2004/0016958 (2004-01-01), Kato et al.
patent: 2004/0016967 (2004-01-01), Yamazaki et al.
patent: 2004/0026696 (2004-02-01), Yamazaki et al.
patent: 2004/0063258 (2004-04-01), Kasahara et al.
patent: 2005/0020096 (2005-01-01), Miyairi et al.
patent: 2005/0029518 (2005-02-01), Kato et al.
patent: 2005/0029519 (2005-02-01), Yamazaki et al.
patent: 2005/0098784 (2005-05-01), Isobe et al.
patent: 2005/0136581 (2005-06-01), Kato et al.
patent: 2005/0158936 (2005-07-01), Kato et al.
patent: 2005/0161742 (2005-07-01), Isobe et al.
patent: 2005/0205869 (2005-09-01), Yamazaki et al.
patent: 2005/0227376 (2005-10-01), Yamazaki
patent: 1 049 144 (2000-11-01), None
patent: 1 067 593 (2001-01-01), None
patent: 1 103 946 (2001-05-01), None
patent: 62-104117 (1987-05-01), None
patent: 63-031108 (1988-02-01), None
patent: 06-349735 (1994-12-01), None
patent: 07-130652 (1995-05-01), None
patent: 08-070129 (1996-03-01), None
patent: 08-078329 (1996-03-01), None
patent: 08-195357 (1996-07-01), None
patent: 10-012891 (1998-01-01), None
patent: 10-135468 (1998-05-01), None
patent: 10-135469 (1998-05-01), None
patent: 11-084418 (1999-03-01), None
patent: 11-354442 (1999-12-01), None
patent: 2000-068520 (2000-03-01), None
patent: 2000-349296 (2000-12-01), None
patent: 2001-011085 (2001-01-01), None
patent: 2001-144027 (2001-05-01), None
patent: 2001-196599 (2001-07-01), None
patent: 2001-343933 (2001-12-01), None
patent: 2002-014337 (2002-01-01), None
patent: 2002-313811 (2002-10-01), None
patent: 2002-324808 (2002-11-01), None
patent: WO 00/63956 (2000-10-01), None
H.W. Lam et al.,Characteristics of MOSFETS Fabricated in Laser-Recrystallized Polysilicon Islands with a Retaining Wall Structure on an Insulating Substrate, IEEE Electron Device Letters, vol. EDL-1, No. 10, Oct. 1980, pp. 206-208.
T. Tsutsui et al.,Electroluminescence in Organic Thin Films, Photochemical Processes in Organized Molecular Systems, 1991, pp. 437-450.
M.A. Baldo et al.,Highly Efficient Phosphorescent Emission from Organic Electroluminescent Devices, Letters to Nature, vol. 395, Sep. 10, 1998, pp. 151-154.
M.A. Baldo et al.,Very High-Efficiency Green Organic Light-Emitting Devices Based on Electrophosphorescence, Applied Physics Letters, vol. 75, No. 1, Jul. 5, 1999, pp. 4-6.
T. Tsutsui et al.,High Quantum Efficiency in Organic Light-Emitting Devices with Iridium-Complex as a Triplet Emissive Center, Jpn. J. Appl. Phys., vol. 38, Part 2, No. 12B, Dec. 15, 1999, pp. L1502-L1504.
M.W. Geis et al.,Crystalline Silicon on Insulators by Graphoepitaxy, IEDM 79: Tec
Isobe Atsuo
Kato Kiyoshi
Miyairi Hidekazu
Miyake Hiroyuki
Shionoiri Yutaka
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Semiconductor element, semiconductor device, electronic... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor element, semiconductor device, electronic..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor element, semiconductor device, electronic... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3815900