Semiconductor device manufacturing: process – Manufacture of electrical device controlled printhead
Reexamination Certificate
2008-04-22
2008-04-22
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Manufacture of electrical device controlled printhead
C438S045000, C438S048000, C438S478000, C257SE39005
Reexamination Certificate
active
07361518
ABSTRACT:
A nitride semiconductor growth layer is laid on a substrate having an engraved region provided with a depressed portion.
REFERENCES:
patent: 5648668 (1997-07-01), Kasai
patent: 6117713 (2000-09-01), Hoshino et al.
patent: 2002/0115267 (2002-08-01), Tomiya et al.
patent: 2000-164986 (2000-06-01), None
Lindsay, Jr. Walter
Morrison & Foerster / LLP
Mustapha Abdulfattah
Sharp Kabushiki Kaisha
LandOfFree
Semiconductor element, semiconductor device, and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor element, semiconductor device, and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor element, semiconductor device, and method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2751642