Semiconductor element, semiconductor device, and method for...

Semiconductor device manufacturing: process – Manufacture of electrical device controlled printhead

Reexamination Certificate

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Details

C438S045000, C438S048000, C438S478000, C257SE39005

Reexamination Certificate

active

07361518

ABSTRACT:
A nitride semiconductor growth layer is laid on a substrate having an engraved region provided with a depressed portion.

REFERENCES:
patent: 5648668 (1997-07-01), Kasai
patent: 6117713 (2000-09-01), Hoshino et al.
patent: 2002/0115267 (2002-08-01), Tomiya et al.
patent: 2000-164986 (2000-06-01), None

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