Semiconductor element, method of driving semiconductor...

Television – Camera – system and detail – Solid-state image sensor

Reexamination Certificate

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C348S299000, C348S300000

Reexamination Certificate

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07965326

ABSTRACT:
A semiconductor element comprises: two-dimensionally aligned pixels with a plurality of photoelectric conversion portions that photoelectrically converts incident light into a signal charge; a plurality of vertical transfer paths to which the signal charges are transferred from said plurality of photoelectric conversion portions; and read gates that amplify the signal charges read from the photoelectric conversion portions to transfer to said plurality of vertical transfer paths; wherein two or more of the read gates are formed for each of said plurality of photoelectric conversion portions, and amplification factors of the two or more of the read gates differ from each other.

REFERENCES:
patent: 7079183 (2006-07-01), Yamada
patent: 7079184 (2006-07-01), Yanai
patent: 7759752 (2010-07-01), Summa et al.
patent: 2005/0057672 (2005-03-01), Summa et al.
patent: 2008/0079831 (2008-04-01), Kobayashi et al.
patent: 2008/0204585 (2008-08-01), Meisenzahl et al.
patent: 7-153988 (1995-06-01), None
patent: 8-340099 (1996-12-01), None
patent: 2003-347317 (2003-12-01), None

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