Television – Camera – system and detail – Solid-state image sensor
Reexamination Certificate
2011-06-21
2011-06-21
Chan, Jason (Department: 2622)
Television
Camera, system and detail
Solid-state image sensor
C348S299000, C348S300000
Reexamination Certificate
active
07965326
ABSTRACT:
A semiconductor element comprises: two-dimensionally aligned pixels with a plurality of photoelectric conversion portions that photoelectrically converts incident light into a signal charge; a plurality of vertical transfer paths to which the signal charges are transferred from said plurality of photoelectric conversion portions; and read gates that amplify the signal charges read from the photoelectric conversion portions to transfer to said plurality of vertical transfer paths; wherein two or more of the read gates are formed for each of said plurality of photoelectric conversion portions, and amplification factors of the two or more of the read gates differ from each other.
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Furuta Yoshinori
Kobayashi Hirokazu
Oshima Hiroyuki
Birch & Stewart Kolasch & Birch, LLP
Calderon Cynthia
Chan Jason
FUJIFILM Corporation
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