Semiconductor element manufacturing process using sequential gri

Details Semiconductor element manufacturing process using sequential gri Semiconductor element manufacturing process using sequential gri

1991-09-04

1992-06-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437228, 437974, 148DIG51, 148DIG135, 156625, 156DIG111, 511313, 51281R, H01L 2100, H01L 2102, B24B 100

Patent

active

051224810

ABSTRACT:
There is disclosed a method of manufacturing a semiconductor device comprising the steps of: forming a semiconductor element on one of major surfaces of a GaAs substrate; a grinding the substrate to make the GaAs substrate to a predetermined thickness by grinding the other surface of the GaAs substrate with a grinding stone having an average grain size of 6 micro-meters or larger; and an chemical etching the other surface of the substrate by 0.6 micro-meters or more just after the grinding step, without any further grinding treatment done on the other surface, just after the grinding step.

REFERENCES:
patent: 4226056 (1980-10-01), Komanduri et al.
patent: 4411107 (1983-10-01), Sekija et al.
patent: 4587771 (1986-05-01), Buchner et al.
patent: 4947598 (1990-08-01), Sekiya
patent: 5035087 (1991-07-01), Nishiguchi et al.
Nishiguchi, M., "High Mechanical Reliability of Back-ground GaAs LSI Chips with Low Thermal Resistance", Proceedings of the 41st Electronic Components and Technology Conf., May 1991, pp. 890-896.

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