Semiconductor element manufacturing method

Details Semiconductor element manufacturing method Semiconductor element manufacturing method

1992-09-18

1994-11-22

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from solid or gel state

Using heat

117 10, 437 84, 437108, C30B 106

Patent

active

053658752

ABSTRACT:
An object of this invention is to provide a semiconductor element manufacturing method in which, in forming a polycrystal semiconductor layer by applying ultraviolet rays to an amorphous semiconductor layer formed on a large substrate, an excimer laser employed in the conventional art is used in such a manner that the layer is made uniform in crystallinity, thereby to manufacture a polycrystal semiconductor layer high in quality. According to the present invention, in a semiconductor element manufacturing method comprising a step of applying an excimer laser beam providing a beam spot having a predetermined irradiation area to an amorphous semiconductor layer formed on an insulating substrate to crystallize the amorphous semiconductor layer to obtain a polycrystal semiconductor layer, the beam spot is moved over said amorphous semiconductor layer in a scanning mode while being shifted with a pitch of at most 1 mm, so that all the parts of the semiconductor layer are substantially equal to one another in the energy applied thereto.

REFERENCES:
patent: 4234358 (1980-11-01), Celler et al.
patent: 4358326 (1982-11-01), Doo
patent: 4417347 (1983-11-01), Muka et al.
patent: 4439245 (1984-03-01), Wu
patent: 4693758 (1987-09-01), Kobayashi et al.
patent: 5122223 (1992-06-01), Geis et al.
"High-Performance TFT's Fabricated by XeCl Excimer Laser Annealing . . . "; IEEE Transactions on Electron Devices, vol. 36, No. 12, Dec. 1989.
"Englargement of P-Si film Grain Size by Excimer . . . " Extended Abstracts of the 1991 Int'l Conf. on Solid State Devices & Materials, 1991, pp. 623-625.
Extended Abstracts (The 38th Spring Meeting, 1991); The Japan Society of Applied Physics and Related Societies No. 2.
Sameshima et al, (I) "XeCl Excimer Laser Annealing Used to Fabricate Poly-SI TFTS", Mat, Res. Soc. Symp Pro. Vol. 71 Apr. 1986 pp. 435-440.
Sameshima et al, (II) "XeCl Excimer Laser Annealing Used to Fabricate Poly-SI TFTS " Jap. Jour. Applied Physics vol. 28, No. 10 Oct. 1989 pp. 1789-1793.

Affiliated with

Also associated with

Rating

Semiconductor element manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor element manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor element manufacturing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1984305