Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1994-08-15
1997-09-23
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257755, 257757, 257904, H01L 2943, H01C 713
Patent
active
056708203
ABSTRACT:
In a semiconductor polycide resistive element having a first region of polysilicon of one conductivity type and second regions of polysilicon of opposite conductivity type, with silicide overlying the polysilicon but not the first region, the edges of the silicide are spaced apart from the boundaries between the opposite conductivity types.
REFERENCES:
patent: 3590471 (1971-07-01), Lepselter et al.
patent: 3879236 (1975-04-01), Langdon
patent: 3902926 (1975-09-01), Perloff et al.
patent: 4155778 (1979-05-01), Antipov
patent: 4362597 (1982-12-01), Fraser et al.
patent: 4398341 (1983-08-01), Geipel, Jr. et al.
patent: 4400867 (1983-08-01), Fraser
patent: 4451328 (1984-05-01), Dubois
patent: 4455547 (1984-06-01), Murakami et al.
patent: 4470189 (1984-09-01), Roberts et al.
patent: 4558508 (1985-12-01), Kinney et al.
patent: 4560419 (1985-12-01), Bourassa et al.
patent: 4604789 (1986-08-01), Bourassa
patent: 4767721 (1988-08-01), Liao et al.
patent: 4949153 (1990-08-01), Hirao et al.
patent: 4954855 (1990-09-01), Mimura et al.
Patent Abstracts of Japan, Kokai Publication #56-094625, Jul. 1981, vol. 5 No. 167, Yoshitaka.
Mahan et al., "Giaohm--Range Polycrystalline Silicon Resistors for Microelectronic Applications," IEEE Trans. On Electron Devices ED-30 (Jan. 1983), pp. 45-51.
Abdel--Motales et al., "A Simple Self-Aligned GaAs MESFET Using Polymide", Solid State Electronics, vol. 30, No. 4, pp. 361-363 (1987).
Wolf et al., Silicon Processing for the VLSI Era, vol. 1: Process Technology, pp. 57, 326, and 328 (1986).
Campbell Richard Norman
Smith Elizabeth Ann
Thompson Michael Kevin
Brown Peter Toby
Inmos Limited
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