Semiconductor element having surface coating comprising silicon

Details Semiconductor element having surface coating comprising silicon Semiconductor element having surface coating comprising silicon

1967-03-17

1976-09-07

Lynch, Michael J.

357 52, H01L 2934

Patent

active

039797686

ABSTRACT:
A semiconductor element having a surface coating consisting of, for example, a silicon nitride film and a silicon oxide film covering different surface portions of a semiconductor substrate of, for example, silicon so that such surface coating can be utilized for selective diffusion of impurities such as gallium and antimony. In a semiconductor device thus formed, the surface coating acts as a satisfactory surface protective film against external atmosphere, and the backward characteristics of the PN junction can be improved because the end edge of the PN junction terminating at the substrate surface is covered with the silicon nitride film.

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IBM Tech. Discl. Bul., "Formation of Depletion and Enhancement Mode Field Effect Transistors" by Lehman et al., vol. 8, No. 4, Sept. 1965.
Proceedings of the IEEE, Jan. 1966, pp. 87-88; an article entitled: A New Insulated-Gate Silicon Transistor.

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