Semiconductor element having bivalent and VI group element and a

Details Semiconductor element having bivalent and VI group element and a Semiconductor element having bivalent and VI group element and a

1994-03-17

1996-01-30

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 93, 257 99, 257 78, H01L 3300, H01L 2922, H01L 310256, H01L 310296

Patent

active

054882346

ABSTRACT:
Ions are implanted to the n-type or p-type semiconductor layers of a semiconductor element, which includes a semiconductor having a multilayer structure on a substrate, a metal electrode on one entire surface of the semiconductor and a metal section partially formed on the metal electrode, in an amount from 10.sup.12 ions/cm.sup.2 to 10.sup.18 ions/cm.sup.2, thus forming an insulating layer in the n-type or p-type semiconductor layers.

REFERENCES:
patent: 4783426 (1988-11-01), Nishizawa
patent: 4868612 (1959-09-01), Oshima et al.
patent: 4992837 (1991-02-01), Sakai et al.
patent: 5122844 (1992-06-01), Akiba et al.
English language translation of Japanese Kokai Patent Application No. Sho 54 (1979) 20684 (Application date: Jul. 18, 1977, Publication date: Feb. 16, 1979.).
Haase et al., "Blue-green laser diodes", Appl. Phys. Lett. 59 (11), 9 Sep. 1991 (pp. 1272-1274).
Hayashi et al., "Zn.sub.1-x Cd.sub.x Se (X=0.2-0.3) Single-Quantum-Well Laser Diodes without GaAs Buffer Layers", Jpn. J. Appl. Phys., vol. 31 (1992) pp. L1478-L1480.

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