Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2002-11-07
2009-12-08
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257SE27132, C257SE27152
Reexamination Certificate
active
07629611
ABSTRACT:
A current storing circuit capable of having a small area, a simple structure with the small number of devices, a low consumption current operation and high yield in manufacturing is provided. Applying the current storing circuit to the current-driving type of display device such as an OLED display device can improve the aperture rate of pixels and reliability of the display device as well as highly functionalize the display device. The invention is characterized by using a new semiconductor element in a shape of a transistor having plural drains or sources. When the semiconductor elements is used for both of a writing element and a driving element, reading in and storing a current value and outputting the current can be performed by only the two semiconductor elements, so that the area occupied by the devices would be easily reduced significantly.
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Costellia Jeffrey L.
Hu Shouxiang
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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